Charge carrier interference in modulated quantum wires

Citation
Nt. Bagraev et al., Charge carrier interference in modulated quantum wires, SEMICONDUCT, 34(4), 2000, pp. 462-472
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
4
Year of publication
2000
Pages
462 - 472
Database
ISI
SICI code
1063-7826(2000)34:4<462:CCIIMQ>2.0.ZU;2-4
Abstract
Quantized conductance as a function of the charge carrier energy in modulat ed quantum wires is investigated for the first time. The energy dependence of the coefficient of transit through a modulated quantum wire was calculat ed, with the delta-potential approximation used to describe the charge carr ier quantum interference in the system of ultrasteep internal barriers. The current steps and oscillations in the quantized conductance plateaus, obse rvable as the oscillating features in the quantum wire conductance under va rying longitudinal voltage, are predicted. Such oscillations, resulting fro m the quantum interference of the ballistic holes, are observed experimenta lly for the first time by recording quantized conductance plateaus as a fun ction of the voltage applied along the silicon modulated quantum wire. (C) 2000 MAIK "Nauka/Interperiodica".