Dependence of the energy spectrum of a strained ZnSe/ZnS superlattice on the charge-carrier concentration

The model of self-consistent electron-deformation coupling was used to show that additional periodic local electron-deformation wells and barriers ari se in the vicinity of heterocontact in a strained ZnSe/ZnS superlattice wit hin the main quantum well (ZnSe) and above the main barrier (ZnS). It is fo und that, for the thickness of the ZnSe overgrown layer in the range from 1 0 to 20 Angstrom, the electron ground-state energy E-0c decreases steadily with increasing conduction-electron concentration n(c); however, for the la yer thickness exceeding 20 Angstrom, the concentration dependence E-0c = f( n(c)) becomes nonmonotonic and features a maximum, which shifts to lower co ncentrations n(c) as the layer thickness increases. (C) 2000 MAIK "Nauka/In terperiodica".