Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (lambda=3.0-3.6 mu m)

Authors
Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN Beyer, T Brunner, R
Citation
M. Aidaraliev et al., Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (lambda=3.0-3.6 mu m), SEMICONDUCT, 34(4), 2000, pp. 488-492
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
4
Year of publication
2000
Pages
488 - 492
Database
ISI
SICI code
1063-7826(2000)34:4<488:SCOLBO>2.0.ZU;2-F
Abstract
It is shown that an increase in the internal losses beyond the lasing thres hold in the lasers based on InGaAsSb/InAsSbP double heterostructures (wavel ength range lambda = 3.0-3.6 mu m, temperature T = 77 K) causes the current -related shift of the laser mode to shorter wavelengths. This shift is as l arge as 80 cm(-1)/A and can explain the broadening of the laser line from 5 to 7 MGz as the pump current increases. (C) 2000 MAIK "Nauka/Interperiodic a".