An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs

Authors
Ikeno, R Aoki, M
Citation
R. Ikeno et M. Aoki, An equivalent electric-field approximation for formulating sheet density of induced electrons in a silicon layer of symmetric and asymmetric double-gate SOI MOSFETs, SOL ST ELEC, 44(4), 2000, pp. 605-611
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
4
Year of publication
2000
Pages
605 - 611
Database
ISI
SICI code
0038-1101(200004)44:4<605:AEEAFF>2.0.ZU;2-H
Abstract
An analytical expression for the sheet density of induced electrons in chan nels of symmetric and asymmetric double-gate (DG) silicon-on-insulator (SOI ) MOSFETs in a subthreshold region has been developed. A new approach for a pproximating the vertical electric-field in the silicon layer enabled the s imple expression for electron density to be derived. This model was found t o be useful for devices with wide ranges of silicon-layer thickness and cha nnel-impurity concentration. (C) 2000 Elsevier Science Ltd. All rights rese rved.