High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors

Authors
Cao, XA Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Ren, F Dang, G Zhang, AP Abernathy, CR Pearton, SJ
Citation
Xa. Cao et al., High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors, SOL ST ELEC, 44(4), 2000, pp. 649-654
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
4
Year of publication
2000
Pages
649 - 654
Database
ISI
SICI code
0038-1101(200004)44:4<649:HTCOGH>2.0.ZU;2-D
Abstract
GaN Bipolar Junction Transistors and GaN/A1GaN Heterojunction Bipolar Trans istors were characterized at temperatures up to 250-300 degrees C and power densities > 10 kW cm(-2). The breakdown voltage in both types of devices d ecreased at higher temperatures, with less degradation in the BJTs. At low current levels, the offset voltages were 2-3 V but increased at higher curr ents. (C) 2000 Elsevier Science Ltd, All rights reserved.