New simple procedure to determine the threshold voltage of MOSFETs

Authors
Sanchez, FJG Ortiz-Conde, A De Mercato, G Salcedo, JA Liou, JJ Yue, Y
Citation
Fjg. Sanchez et al., New simple procedure to determine the threshold voltage of MOSFETs, SOL ST ELEC, 44(4), 2000, pp. 673-675
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
4
Year of publication
2000
Pages
673 - 675
Database
ISI
SICI code
0038-1101(200004)44:4<673:NSPTDT>2.0.ZU;2-K
Abstract
A new alternative technique is proposed to extract the threshold voltage fr om the subthreshold-to-strong inversion transition region of MOSFETs. It us es an auxiliary operator that involves integration of the drain current as a function of gate voltage. Tests show that the procedure produces results comparable to conventional methods. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.