Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect

Authors
Nicolett, AS Martino, JA Simoen, E Claeys, C
Citation
As. Nicolett et al., Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect, SOL ST ELEC, 44(4), 2000, pp. 677-684
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
4
Year of publication
2000
Pages
677 - 684
Database
ISI
SICI code
0038-1101(200004)44:4<677:EOTLDD>2.0.ZU;2-V
Abstract
We present a simple method to extract the effective doping concentration re lated to the LDD (Lightly Doped Drain) regions in fully depleted SOI MOSFET s. The series resistance of an LDD structure MOSFET is composed of differen t components, the LDD series resistance, being the dominant one. The propos ed method uses the back gate voltage influence on the back interface below the LDD region. MEDICI simulations were used to support the analysis. Exper imental results obtained from I-V data were compared to the simulated resul ts demonstrating a good agreement. (C) 2000 Elsevier Science Ltd. All right s reserved.