Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length

Citation
Jc. Pla et al., Short circuit current vs cell thickness in solar cells under rear illumination: a direct evaluation of the diffusion length, SOL ST ELEC, 44(4), 2000, pp. 719-724
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
44
Issue
4
Year of publication
2000
Pages
719 - 724
Database
ISI
SICI code
0038-1101(200004)44:4<719:SCCVCT>2.0.ZU;2-8
Abstract
The dependence of the short circuit current of a solar cell with its thickn ess is analysed for rear illumination. Under certain conditions, a simple l inear regression in a semilogarithm scale is found. Using these results, an almost direct evaluation of the minority carrier diffusion length in the b ase region of crystalline silicon solar cells is achieved. On the other han d, from the experimental point of view, monochromatic light is not required and the equipment requirements are minimised. The model presented in this paper is theoretically evaluated using a 1-dimensional simulation code. Som e preliminary experimental results are also shown. (C) 2000 Elsevier Scienc e Ltd. All rights reserved.