Growth and electronic structure of vanadium on alpha-Al2O3(0001)

Citation
J. Biener et al., Growth and electronic structure of vanadium on alpha-Al2O3(0001), SURF SCI, 449(1-3), 2000, pp. 50-60
Citations number
48
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
449
Issue
1-3
Year of publication
2000
Pages
50 - 60
Database
ISI
SICI code
0039-6028(20000320)449:1-3<50:GAESOV>2.0.ZU;2-Q
Abstract
The interaction of metallic vanadium with the alpha-Al2O3(0001) surface was studied in the submonolayer-to-multilayer coverage regime using X-ray phot oemission spectroscopy (SPS) and near-edge X-ray absorption fine structure (NEXAFS). At low coverage the V 2p photoemission spectra reveal a strong in teraction of vanadium with alumina, thus indicating the formation of a vana dium oxide. The NEXAFS data, both the line-shape and the position of the va nadium L-edge, are consistent with the formation of V2O3. A comparison of t he results of both spectroscopies reveals that vanadium seems to be highly dispersed at low coverage, and final state effects on the core level ioniza tion energies, e.g, cluster size effects, have to be considered. At higher amounts of vanadium deposition a metallic vanadium overlayer forms on top o f a vanadia/Al2O3 interface. In an ambient of 5 x 10(-5) Torr oxygen metall ic vanadium oxidizes rapidly, even at 300 K, and the formation of V2O3 is o bserved. (C) 2000 Elsevier Science B.V. All rights reserved.