Low temperature transport and magnetic properties of SmB6

We present results of transport and magnetic properties of three single-cry stalline samples of the intermediate valence small-gap semiconductor SmB6 a t low temperatures. The received resistivity dependences of the samples bel ow 0.5 K exhibit an activated behavior with an energy gap of a few mK. The temperature dependences of the magnetic susceptibility show an increase bel ow 15 K which can be accounted for by impurities, by bare Sm3+ ions or by a small amount of in-gap magnetic 4f(5)5d(1) states.