Tunneling magnetoresistance in planar ferromagnetic junctions

Citation
M. Wilczynski et J. Barnas, Tunneling magnetoresistance in planar ferromagnetic junctions, ACT PHY P A, 97(3), 2000, pp. 443-446
Citations number
8
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
05874246 → ACNP
Volume
97
Issue
3
Year of publication
2000
Pages
443 - 446
Database
ISI
SICI code
0587-4246(200003)97:3<443:TMIPFJ>2.0.ZU;2-W
Abstract
Bias dependence of the tunnel magnetoresistance in simple planar ferromagne tic junctions is considered theoretically within the one-band model. The li mit of sequential tunnelling in double junctions with a non-magnetic centra l electrode is studied as well. In this case tunnel magnetoresistance exist s only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.