Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors

Authors
Dugaev, VK Litvinov, VI Dobrowolski, W Story, T
Citation
Vk. Dugaev et al., Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors, ACT PHY P A, 97(3), 2000, pp. 455-458
Citations number
13
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
05874246 → ACNP
Volume
97
Issue
3
Year of publication
2000
Pages
455 - 458
Database
ISI
SICI code
0587-4246(200003)97:3<455:IBMLIS>2.0.ZU;2-C
Abstract
The results of calculation of the indirect exchange interaction between mag netic layers are presented for the case of a structure with narrow-gap semi conducting IV-VI quantum well. The main mechanism is a magnetic polarizatio n of the size-quantized electrons and holes inside the well. This type of i nteraction is suggested for the explanation of recent experiments on EuS/Pb S structures.