Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices

Citation
Ls. Matkin et al., Resonant x-ray scattering at the Se edge in liquid crystal free-standing films and devices, APPL PHYS L, 76(14), 2000, pp. 1863-1865
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
14
Year of publication
2000
Pages
1863 - 1865
Database
ISI
SICI code
0003-6951(20000403)76:14<1863:RXSATS>2.0.ZU;2-Q
Abstract
Resonant x-ray diffraction was carried out at the Se K edge in thick free-s tanding films of a selenophene liquid crystalline material, revealing detai l of the structure of the ferro-, ferri-, and antiferroelectric phases. The ferrielectric phase was shown to have a three-layer superlattice. Moreover , the structure of a lower temperature hexatic phase was established. For t he antiferroelectric phase, investigations were also carried out in a plana r device configuration. The device allowed resonant scattering experiments to be carried out with and without the application of an electric field and resonant data are compared with electro-optic measurements carried out on the same device. (C) 2000 American Institute of Physics. [S0003-6951(00)015 13-8].