Carrier transport in GaAs/AlAs type-II superlattices under electric field:Switch from X-X to Gamma-Gamma transfer

Authors
Hosoda, M Ohtani, N Kuroyanagi, K Domoto, C
Citation
M. Hosoda et al., Carrier transport in GaAs/AlAs type-II superlattices under electric field:Switch from X-X to Gamma-Gamma transfer, APPL PHYS L, 76(14), 2000, pp. 1866-1868
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
14
Year of publication
2000
Pages
1866 - 1868
Database
ISI
SICI code
0003-6951(20000403)76:14<1866:CTIGTS>2.0.ZU;2-5
Abstract
A switch in carrier transport from X-X to Gamma-X-Gamma is found in a GaAs/ AlAs type-II superlattice under an electric field. This phenomenon is cause d by an X-Gamma transfer, as demonstrated by the photoluminescence, photocu rrent response, and current-voltage characteristics. Under a high electric field, most of the electrons flow through the Gamma path even in type-II su perlattices. (C) 2000 American Institute of Physics. [S0003-6951(00)00214-X ].