Cerenkov generation of high-frequency confined acoustic phonons in quantumwells

Citation
Sm. Komirenko et al., Cerenkov generation of high-frequency confined acoustic phonons in quantumwells, APPL PHYS L, 76(14), 2000, pp. 1869-1871
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
14
Year of publication
2000
Pages
1869 - 1871
Database
ISI
SICI code
0003-6951(20000403)76:14<1869:CGOHCA>2.0.ZU;2-T
Abstract
We analyze the Cerenkov emission of high-frequency confined acoustic phonon s by drifting electrons in a quantum well. We find that the electron drift can cause strong phonon amplification (generation). A general formula for t he gain coefficient alpha is obtained as a function of the phonon frequency and the structure parameters. The gain coefficient increases sharply in th e short-wave region. For the example of a Si/SiGe/Si device, it is shown th at the amplification coefficients of the order of hundreds of cm(-1) can be achieved in the subterahertz frequency range. (C) 2000 American Institute of Physics. [S0003-6951(00)00514-3].