We analyze the Cerenkov emission of high-frequency confined acoustic phonon
s by drifting electrons in a quantum well. We find that the electron drift
can cause strong phonon amplification (generation). A general formula for t
he gain coefficient alpha is obtained as a function of the phonon frequency
and the structure parameters. The gain coefficient increases sharply in th
e short-wave region. For the example of a Si/SiGe/Si device, it is shown th
at the amplification coefficients of the order of hundreds of cm(-1) can be
achieved in the subterahertz frequency range. (C) 2000 American Institute
of Physics. [S0003-6951(00)00514-3].