Low-dose nitrogen implants in 6H-silicon carbide

Low-dose n-type nitrogen implants in 6H-SiC have been studied using the Hal l effect. Previous studies of doping by implantation in SiC have concentrat ed on heavily doped layers such as required for transistor sources and drai ns. Here, we focus on more lightly doped layers, e.g., such as required for the active regions of high-voltage power devices. The low-dose N implants are found to activate more readily than high doses. Almost ideal N-implante d layers with a donor density of similar to 1 x 10(17)/cm(3) and a low resi dual acceptor density from implant damage of only similar to 1.5 x 10(15)/c m(3) have been obtained after a 1400 degrees C anneal. (C) 2000 American In stitute of Physics. [S0003-6951(00)03714-1].