Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy

Citation
J. O'Donnell et al., Colossal magnetoresistance magnetic tunnel junctions grown by molecular-beam epitaxy, APPL PHYS L, 76(14), 2000, pp. 1914-1916
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
14
Year of publication
2000
Pages
1914 - 1916
Database
ISI
SICI code
0003-6951(20000403)76:14<1914:CMMTJG>2.0.ZU;2-8
Abstract
Using molecular-beam-epitaxy growth techniques, we have synthesized ferroma gnet/insulator/ferromagnet trilayer heterostructures with the "colossal" ma gnetoresistance material La1-xSrxMnO3 as the ferromagnet. These trilayer fi lms were fabricated into magnetic tunnel junctions which exhibit magnetores istance Delta R/R(H) of as much as 450% in 200 Oe applied field at 14 K, an d which persists up to similar to 250 K. In situ reflection high-energy ele ctron diffraction (RHEED) allows us to correlate the quality of the epitaxi al growth with the magnetoresistive properties. Samples which showed signs of disorder in RHEED also exhibit disorder effects in low-temperature trans port and have smaller magnetoresistance which vanishes at lower temperature s. (C) 2000 American Institute of Physics. [S0003-6951(00)01014-7].