Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Authors
Lee, BH Kang, LG Nieh, R Qi, WJ Lee, JC
Citation
Bh. Lee et al., Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing, APPL PHYS L, 76(14), 2000, pp. 1926-1928
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
76
Issue
14
Year of publication
2000
Pages
1926 - 1928
Database
ISI
SICI code
0003-6951(20000403)76:14<1926:TSAECO>2.0.ZU;2-8
Abstract
Dielectric properties of ultrathin hafnium oxide reoxidized with rapid ther mal annealing (RTA) have been investigated. Capacitance equivalent oxide th ickness (CET) of 45 Angstrom hafnium oxide was scaled down to similar to 10 A with a leakage current less than 3 x 10(-2) A/cm(2) at -1.5 V (i.e., sim ilar to 2 V below V-FB). Leakage current increase due to crystallization wa s not observed even after 900 degrees C rapid thermal annealing (RTA), but CET did increase after high temperature RTA due to the interfacial layer gr owth and possible silicate formation in the HfO2 film. (C) 2000 American In stitute of Physics. [S0003-6951(00)04414-4].