Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organicchemical vapor deposition

Authors
Williams, MD Greene, AL Daniels-Race, T Lum, RM
Citation
Md. Williams et al., Comparison of InGaAs(100) grown by chemical beam epitaxy and metal organicchemical vapor deposition, APPL SURF S, 157(3), 2000, pp. 123-128
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
157
Issue
3
Year of publication
2000
Pages
123 - 128
Database
ISI
SICI code
0169-4332(200004)157:3<123:COIGBC>2.0.ZU;2-X
Abstract
Secondary ion mass spectrometry is used to study the effects of substrate t emperature on the composition and growth rate of InGaAs/InP(100) multilayer s grown by chemical beam epitaxy, metal-organic chemical vapor deposition a nd solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared. (C) 2000 Else vier Science B.V. All rights reserved.