The pressure effect on the recombination and relaxation of hydrogen atoms in solid hydrogen

Citation
V. Shevtsov et al., The pressure effect on the recombination and relaxation of hydrogen atoms in solid hydrogen, CHEM P LETT, 319(5-6), 2000, pp. 535-541
Citations number
19
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
319
Issue
5-6
Year of publication
2000
Pages
535 - 541
Database
ISI
SICI code
0009-2614(20000324)319:5-6<535:TPEOTR>2.0.ZU;2-Y
Abstract
We have studied experimentally for the first time the properties of hydroge n atoms in solid hydrogen under pressure. The recombination rate constant h as activation-type temperature dependence in the pressure range from 0 to 2 2 MPa. The activation energy increases linearly with external pressure E-a = (2.4 P + 106 K), as should be expected in the case of a tunneling vacancy mechanism in atom diffusion. Strong pressure effects on the linewidth of t he ESR signal and on the spin-lattice relaxation time T-1 were explained by the competition between the local ortho-para conversion process around the H atom and the pressure-dependent diffusion. (C) 2000 Elsevier Science B.V . All rights reserved.