V. Shevtsov et al., The pressure effect on the recombination and relaxation of hydrogen atoms in solid hydrogen, CHEM P LETT, 319(5-6), 2000, pp. 535-541
We have studied experimentally for the first time the properties of hydroge
n atoms in solid hydrogen under pressure. The recombination rate constant h
as activation-type temperature dependence in the pressure range from 0 to 2
2 MPa. The activation energy increases linearly with external pressure E-a
= (2.4 P + 106 K), as should be expected in the case of a tunneling vacancy
mechanism in atom diffusion. Strong pressure effects on the linewidth of t
he ESR signal and on the spin-lattice relaxation time T-1 were explained by
the competition between the local ortho-para conversion process around the
H atom and the pressure-dependent diffusion. (C) 2000 Elsevier Science B.V
. All rights reserved.