B. Tippelt et al., PLASTIC-DEFORMATION OF GAAS BY ULTRASONIC TREATMENT, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(4), 1994, pp. 741-750
For the first time we have obtained plastic deformation of A(III)B(V)
semiconductors by ultrasonic treatment at high amplitudes. For tempera
tures above 520 K the plastic deformation of predeformed GaAs:Zn by ul
trasonics has been detected by observing the multiplication and rearra
ngement of dislocations and also a sudden change of internal friction.
From the sinusoidal distribution of vibration stress amplitude inside
the sample it is possible to determine the stress at which the reorie
ntation of predeformation-induced dislocatiins starts, as well as the
stress at the beginning dislocation multiplication. Transmission elect
ron microscopy investigations show a good agreement of the value of th
e stress where the multiplication by ultrasonic treatment begins with
the yield stress obtained by uniaxial compression. However, the rearra
ngement of dislocations begins at lower stresses than that needed to r
each multiplication.