A NEW REGIME OF DYNAMIC RECOVERY IN THE HIGH-TEMPERATURE DEFORMATION OF SEMICONDUCTORS

It is well established that cross-slip is a dominating process in the second stage of dynamical recovery in elemental and compound semicondu ctors. In the present work, new experimental results are presented whi ch show that, besides cross-slip, a further hitherto unknown mechanism is involved in the deformation at high strains. This effect is only o bserved in measurements on crystals deformed along [123], but not for deformation along [111]. It is suggested that this different behaviour may be traced back to the fact that the [111{ orientation favours cro ss-slip while the [123] orientation does not. In Ge, where the stress- strain curves have been studied over a large temperature range, the ne w mechanism manifests itself in the occurrence of three recovery stage s close to the melting point. Dynamic recrystallization is probably no t the process underlying the new deformation stage.