Ultrafast monolithic receiver OEIC composed of multimode waveguide p-i-n photodiode and HEMT distributed amplifier

A multimode waveguide p-i-n photodiode (WGPD) and a distributed baseband am plifier consisting of high-electron mobility transistors (HEMT's) were mono lithically integrated on InP substrate using a stacked layer structure for both components. The multimode WGPD has a 3-dB bandwidth of 49 GHz. The dis tributed baseband amplifier has a 3-dB bandwidth of 47 GHz, though its 0.5- mu m gate-length HEMT's have modest cutoff frequencies f(T)/f(max) Of 47/10 0 GHz. The receiver optoelectronic integrated circuit has a bandwidth of 46 .5 GHz. It was packaged into a fiber-pig-tailed module, and the WGPD in the module has a high responsivity of 0.62 A/W for 1.55-mu m wavelength. The m odule achieves a sensitivity of -22.7 dBm at 40 Gb/s and exhibits a clear e ye-opening at 50 Gb/s.