Modeling of interconnect capacitance, delay, and crosstalk in VLSI

Citation
Sc. Wong et al., Modeling of interconnect capacitance, delay, and crosstalk in VLSI, IEEE SEMIC, 13(1), 2000, pp. 108-111
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
13
Issue
1
Year of publication
2000
Pages
108 - 111
Database
ISI
SICI code
0894-6507(200002)13:1<108:MOICDA>2.0.ZU;2-Y
Abstract
Increasing complexity in VLSI circuits makes metal interconnection a signif icant factor affecting circuit performance. In this paper, we first develop new closed-form capacitance formulas for two major structures in very larg e scale integration (VLSI), namely, 1) parallel lines on a plane and 2) wir es between two planes, by considering the electrical flux to adjacent wires and to ground separately. We then further derive closed-form solutions for the delay and crosstalk noise. The capacitance models agree well with nume rical solutions of three-dimensional (3-D) Poisson's equation as well as me asurement data. The delay and crosstalk models agree well with SPICE simula tions.