Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors

Authors
Godlewski, M Zakrzewski, AJ Ivanov, VY
Citation
M. Godlewski et al., Auger-type excitation and de-excitation processes in rare earth and transition metal doped semiconductors, J ALLOY COM, 300, 2000, pp. 23-31
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
300
Year of publication
2000
Pages
23 - 31
Database
ISI
SICI code
0925-8388(20000412)300:<23:AEADPI>2.0.ZU;2-B
Abstract
Processes of indirect excitation of rare earth and transition metal ions ar e reviewed. We describe Auger-type processes, in which one of the interacti ng centres is ionised. We show that such Auger-type processes are often ver y efficient and result in indirect excitation of rare earth (transition met al) emission. (C) 2000 Elsevier Science S.A. All rights reserved.