Open f-shell rare-earth ions doped into a solid state matrix often easily c
hange their charge state via interactions with charge carriers generated by
ionizing radiation. This feature promotes a desired efficient radiative re
combination of separated charge carriers at rare-earth ion sites but it may
also help to stabilize various radiation defects that destructively interf
ere with the scintillation. The well-known effect responsible for scintilla
tion light loss due to absorptions introduced by these so-called 'radiation
damage' centers in alkali halides has been identified and studied for a lo
ng time. In this communication we concentrate on a different and much less-
known and studied effect in which radiation induced centers directly and ac
tively participate in the scintillation process itself. We present and disc
uss some selected recent results that illustrate the importance of competit
ion between the prompt radiative recombination via race-earth ions and gene
ration of radiation damage centers in barium fluoride crystals activated wi
th Ce, Pr and Tb. We demonstrate that results of such measurements as radio
luminescence spectra, VUV spectroscopy, low temperature thermoluminescence
glow curves, isothermal decays, and scintillation time profiles can be cons
istently explained in the frame of a simple model that includes one recombi
nation center (RE ion) and a number of charge traps. We find that the trap
model of radiation damage centers such as V-k centers describes reasonably
well their participation in the scintillation process that includes creatio
n (equivalent to charge carrier trapping) and thermally activated decomposi
tion (charge carrier release). These effects are shown to account quantitat
ively for important characteristics of the scintillation process such as la
rge variations in the scintillation light yield with temperature and longer
decay times in the scintillation time profiles that effectively lower the
scintillation light yield at ambient temperatures. (C) 2000 Published by El
sevier Science S.A. All rights reserved.