Colour centers in doped Gd3Ga5O12 and Y3Al5O12 laser crystals

Authors
Matkovskii, A Sugak, D Melnyk, S Potera, P Suchocki, A Frukacz, Z
Citation
A. Matkovskii et al., Colour centers in doped Gd3Ga5O12 and Y3Al5O12 laser crystals, J ALLOY COM, 300, 2000, pp. 395-397
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
300
Year of publication
2000
Pages
395 - 397
Database
ISI
SICI code
0925-8388(20000412)300:<395:CCIDGA>2.0.ZU;2-3
Abstract
The influence of rare earth and 3d impurities on the process of ionizing re charge of genetic defects under gamma-irradiation in Gd3Ga5O12 and Y3Al5O12 laser crystals has been studied by absorption spectroscopy. Impurities wit h stable trivalent states (Nd3+, Er3+ Sm3+, etc) do not change the characte r of absorption spectra of the colour centers formed during gamma-irradiati on. Impurities (Cr, Fe, Ce) which can easily change valency during irradiat ion, compete with growth defects in trapping of the charge carriers generat ed by irradiation. (C) 2000 Elsevier Science S.A. All rights reserved.