Investigation of ultrathin Fe/GaAs (100) films by the ferromagnetic-resonance technique

Authors
Vysotskii, SL Dzhumaliev, AS Nikitov, SA Filimonov, YA Tsyplin, AY
Citation
Sl. Vysotskii et al., Investigation of ultrathin Fe/GaAs (100) films by the ferromagnetic-resonance technique, J COMMUN T, 45(2), 2000, pp. 190-194
Citations number
13
Categorie Soggetti
Information Tecnology & Communication Systems
Journal title
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
ISSN journal
10642269 → ACNP
Volume
45
Issue
2
Year of publication
2000
Pages
190 - 194
Database
ISI
SICI code
1064-2269(200002)45:2<190:IOUF(F>2.0.ZU;2-6
Abstract
By the ferromagnetic-resonance (FMR) technique, ultrathin (12-90 Angstrom) Fe films grown on (100) GaAs substrates by the molecular-beam-epitaxy (MBE) technique are investigated at a frequency of 9.8 GHz. The FMR linewidth of 30-50-Angstrom-thin films is about 20-30 Oe, which is close to the limit v alues. The saturation magnetization, the constants of cubic and in-plane un iaxial anisotropy, and the FMR linewidth are obtained as functions of the f ilm thickness.