Studying of transparent conductive ZnO : Al thin films by RF reactive magnetron sputtering

RF reactive magnetron sputtering was used to deposit transparent conductive ZnO:Al thin films on Coming 7059 glass and Si wafers. The dependence of fi lm properties including microstructure, optical and electronic on coating p arameters (target composition, RF power, substrate temperature, pressure, O -2 partial pressure ratio, annealing temperature and annealing time) was in vestigated. The effect of process parameters was determined by means of fra ctional factorial design of the experiment. Smooth and crystalline ZnO:Al f ilms were obtained in (0 0 0 2) the preferred orientation. Highly transpare nt (> 80%) and low resistivity ZnO:Al films were deposited with optical ban d gap between 3.3 and 3.6 eV. By raising RF power and annealing temperature , and increasing the annealing time, the resistivity could be decreased to a low value of 6.24 x 10(-4) Omega cm. (C) 2000 Elsevier Science B.V. All r ights reserved.