Bulk growth of quasi-binary quaternary alloys

Crystal growth experiments were conducted by: (a) melting together two III- V compounds (InAs, GaSb) and (b) melting together one III-V compound (InSb or GaSb) and one II-VI compound (CdTe or HgTe). These melts contain four di fferent atoms, but in comparison to the conventional quaternary alloys A(x) C(1-x)B(y)D(1-y), have a constrain in the composition given by x = y, and t herefore can be designated as "quasi-binary". The composition of these melt s is (AB)(1-x)(CD)(x). Bulk crystals were produced from these melts by dire ctional solidification and Czochralski pulling. Our goal was to determine w hether the grown crystals will remain "quasi-binary" or, due to segregation will turn conventional quaternary x not equal y. The grown crystals were f ree of cracks, which call be explained by low lattice mismatch. Using the e lectron probe micro-analysis (EPMA). it was determined that quasi-binary (I nSb)(1-x)(CdTe)(x) crystals were obtained. The other systems yielded conven tional quaternary specimens with x not equal y. (C) 2000 Elsevier Science B .V. All rights reserved.