High-temperature solution growth of Cr2+ : CdSe for tunable mid-IR laser application

Citation
Jo. Ndap et al., High-temperature solution growth of Cr2+ : CdSe for tunable mid-IR laser application, J CRYST GR, 211(1-4), 2000, pp. 290-294
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
211
Issue
1-4
Year of publication
2000
Pages
290 - 294
Database
ISI
SICI code
0022-0248(200004)211:1-4<290:HSGOC:>2.0.ZU;2-2
Abstract
Solid-state tunable laser sources in the mid-IR region have been recently i nvestigated for their potential in remote sensing applications. Room temper ature lasers based on single crystals of chrominm-doped CdSe are particular ly interesting due to their broad band tunability beyond 2 mu m spectral re gion. In this study, we have grown doped single crystals by the high-temper ature gradient freezing solution technique, using selenium as the solvent. Crystals of 1.2 cm in diameter and up to 7 cm long, cracks and precipitates free could be obtained. The effective segregation coefficient of Cr2+ ions along the ingot was evaluated. Room temperature emission lifetime values o f 3.0-4.5 mu s were measured. (C) 2000 Published by Elsevier science B.V. A ll rights reserved.