An advanced model taking into account formation of silicon clusters in the
gas phase is employed for modeling analysis of CVD of SiC in commercial ver
tical rotating disc reactor. It has been found that two main parameters hav
e significant influence on the nucleation and transport of the clusters in
the gas phase: input flow rate of silane and the temperature gradient near
the growing surface determining the thermophoretic force. The results of mo
deling the deposition are in good agreement with experimental data. The sil
icon-to-carbon ratio in the gas phase over the SiC wafer is analyzed. (C) 2
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