Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle

Authors
Marin, C Ostrogorsky, AG
Citation
C. Marin et Ag. Ostrogorsky, Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle, J CRYST GR, 211(1-4), 2000, pp. 378-383
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
211
Issue
1-4
Year of publication
2000
Pages
378 - 383
Database
ISI
SICI code
0022-0248(200004)211:1-4<378:GOGGBV>2.0.ZU;2-F
Abstract
A 6 cm in diameter Ga-doped Ge0.98Si0.02 crystal was grown using the vertic al Bridgman method with a submerged baffle. After 3 cm of growth, the baffl e was removed and the solidification continued in conventional Bridgman con figuration. The composition of Si and Ge was measured using electron probe micro-analysis (EPMA). The micro-structure pattern was revealed by etching. The advantages of using the baffle for growth of Si-Ge alloys is discussed . (C) 2000 Elsevier Science B.V. All rights reserved.