Te concentration in GaSb grown under microgravity was measured by spatially
resolved photoluminescence (SRPL). For this purpose, a calibration curve i
s experimentally obtained to give a relationship between Te concentration a
nd PL energy. It was found that after the growth starts the Te concentratio
n drops at the melted and unmelted interface and recovers rapidly to the le
vel of the initial concentration which means that the distribution is close
to that of pure diffusion control. Three possible shapes of the GaSb melt
in space were postulated and it is suggested that a wide free surface exist
ed on the GaSb melt during growth. The reason for the absence of strong Mar
angoni flow is attributed to either the small temperature difference across
the free surface or to the presence of a thin oxide film on the melt. (C)
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