Bb. Dhal et al., Strong double K-K transfer channel in near symmetric collision of Si plus Ar at intermediate velocity range, J PHYS B, 33(5), 2000, pp. 1069-1079
Citations number
26
Categorie Soggetti
Physics
Journal title
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS
We present a combined study of single and double K-K electron transfer cros
s sections along with the single and double K-shell ionization of Ar induce
d by Si projectiles in the energy range 0.9-4.0 MeV u(-1) The charge-state
dependence of the normal and hypersatellite x-rays was used to derive the c
ross sections for the one- and two-electron processes, respectively The enh
ancement in the fluorescence yields due to multiple vacancies was measured
from the energy shifts and intensity ratios of the characteristic x-ray lin
es to derive K-shell vacancy production cross sections from x-ray productio
n cross sections. The ratio of double to single K-K transfer cross sections
is found to be quite large for this nearly symmetric collision system, whe
reas the ratio of double to single ionization cross sections is quite small
. The measured single K-K transfer cross sections are reproduced very well
by the two-centre close-coupling calculations whereas the double K-K transf
er data are underestimated by the theory based on the independent-electron
approximation (IEA). The K-shell ionization cross sections are found to dev
iate strongly from the calculations based on the continuum distorted wave e
ikonal initial state (CDW-EIS) and ECPSSR models. The CDW-EIS calculations
along with the IEA model grossly underestimate the double ionization cross
sections. It is stressed that in the case of two-electron processes the ind
ependent-electron model breaks down and the possible role of correlations b
etween K-electrons is discussed.