ADSORPTION AND DECOMPOSITION OF METHYL-IODIDE ON LOW-INDEX PLANES OF NIAL

Citation
S. Chaturvedi et Dr. Strongin, ADSORPTION AND DECOMPOSITION OF METHYL-IODIDE ON LOW-INDEX PLANES OF NIAL, Langmuir, 13(12), 1997, pp. 3162-3171
Citations number
40
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
07437463
Volume
13
Issue
12
Year of publication
1997
Pages
3162 - 3171
Database
ISI
SICI code
0743-7463(1997)13:12<3162:AADOMO>2.0.ZU;2-X
Abstract
Surface chemistry of CD3I (CH3I) on the (111), (100), and (110) planes of NiAl has been investigated with X-ray photoelectron spectroscopy ( XPS) and temperature programmed desorption (TPD). On the basis of XPS, adsorption of CD3I on the (110) and (111) planes is primarily associa tive at 120 K. In contrast, adsorption of the majority of the reactant on the NiAl(100) plane at 120 K is dissociative. This enhanced dissoc iation on NiAl(100)is attributed to its Al terminated surface. In addi tion to molecular CD3I desorption, TPD shows that CD4 and D-2 are reac tion products that desorb from the NiAl planes during the reaction of CD3I. TPD also suggests that methyl radical, CD3, may result during th e thermal decomposition of CD3I on all three NiAl surfaces. Some C-C b ond formation leading to the desorption of CD2CD2 is experimentally ob served to occur on the (111) plane that exposes both Ni and Al atoms i n the outermost surface.