A computational approach has been delineated to model alkyl monolayers on h
ydrogen-terminated silicon (111) surfaces by molecular mechanics calculatio
ns. The monolayers can be properly described by making use of two-dimension
ally repeating boxes with minimally similar to 30 alkyl chains. For two dif
ferent substitution patterns on the Si surface, both with an overall substi
tution percentage of 50%, good agreement between the computational and the
available experimental data (FT-IR, X-ray, ellipsometry) was found. It is s
hown that the thus formed layers are nearly stress-free and that different
orientations of individual alkyl chains exist, which combined yield an over
all uniformly ordered monolayer.