Microstructural characterisation of TiAl thin films grown by DC magnetron co-sputtering technique

Citation
C. Padmaprabu et al., Microstructural characterisation of TiAl thin films grown by DC magnetron co-sputtering technique, MATER LETT, 43(3), 2000, pp. 106-113
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
43
Issue
3
Year of publication
2000
Pages
106 - 113
Database
ISI
SICI code
0167-577X(200004)43:3<106:MCOTTF>2.0.ZU;2-A
Abstract
The present study deals with the in situ growth of [111] oriented thin film s of TiAl grown by co-sputtering from high purity Ti and Al targets in a DC magnetron sputtering system. The influence of substrate temperature on the chemical and microstructural changes occurring in TiAl thin films has been investigated in the substrate temperature range 573-873 K. Electron probe microanalysis shows that Al concentration increases from 55.78 to 62,15 at. %, while Ti concentration decreases from 44.22 to 37.85 at.% with increase in the substrate temperature. Atomic force microscopy (AFM) of the TiAl fil ms indicates an increase in the crystallite size with substrate temperature . A fine globular morphology of crystallites with a mean surface area of si milar to 1850 nm(2) at 573 K changes to crystallites with a surface area of similar to 2300 nm(2) at 773 K. (C) 2000 Elsevier Science B.V. All rights reserved.