Nucleation kinetics of diamond in hot filament chemical vapor deposition

Diamond nucleation on (111)-oriented monocrystalline silicon wafer was inve stigated by hot filament chemical vapor deposition (HFCVD). The variation o f nucleation density with time was determined. For a lower gas flow rate, t he nucleation density-time curve comprises two parts, which represent the n ucleation at surface defects and smoothly intact surface sites. For a highe r gas flow rate, the distinction between the two parts in the curve tends t o vanish. Diamond nucleation was enhanced by increasing the gas flow rate. (C) 2000 Elsevier Science Ltd.