Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures

The aim of this paper is to present a modified microwave absorption (MWA) t echnique using the partial filling mode, applicable when lifetime measureme nts are performed in the perpendicular excitation-probe regime. In this cas e, the carrier excitation is done by illuminating a cross-section of the la yered structure through fiber optics. The excited area is then perpendicula rly probed by microwave (MW) radiation when the MW antenna is partially fil led with a sample. The potential of this technique is demonstrated on a set of Co-silicided n(+) -p junction diodes and on epitaxial-Si structures. (C ) 2000 Elsevier Science S.A. All rights reserved.