Denuded zone formation by conventional and rapid thermal anneals

Citation
G. Kissinger et al., Denuded zone formation by conventional and rapid thermal anneals, MAT SCI E B, 73(1-3), 2000, pp. 106-110
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
106 - 110
Database
ISI
SICI code
0921-5107(20000403)73:1-3<106:DZFBCA>2.0.ZU;2-6
Abstract
Oxygen outdiffusion by conventional annealing results in well defined denud ed zones and the dissolution of grown-in oxide precipitate nuclei in the re gion near the surface. During a rapid thermal anneal (RTA) the grown-in oxi de precipitate nuclei shrink and due to vacancy outdiffusion during cooling the subsequent growth of the precipitate nuclei is suppressed in the regio n near the surface. However, potential defects still exist in the region ne ar the surface which can grow during ramping with 1 K m(-1) starting from 5 00 degrees C. A dissolution of grown-in oxide precipitate nuclei in the reg ion near the surface seems only possible by RTA in argon/hydrogen atmospher e. The denuded zone defect density is much lower after RTA than after conve ntional annealing for oxygen outdiffusion, while the depth profile of the d efect density is less steep. The use of the above mentioned conclusions for 'ramp engineering' in device processing allows the creation of excellent d enuded zones during a device process itself without influencing the device characteristics. (C) 2000 Elsevier Science S.A. All rights reserved.