Oxygen outdiffusion by conventional annealing results in well defined denud
ed zones and the dissolution of grown-in oxide precipitate nuclei in the re
gion near the surface. During a rapid thermal anneal (RTA) the grown-in oxi
de precipitate nuclei shrink and due to vacancy outdiffusion during cooling
the subsequent growth of the precipitate nuclei is suppressed in the regio
n near the surface. However, potential defects still exist in the region ne
ar the surface which can grow during ramping with 1 K m(-1) starting from 5
00 degrees C. A dissolution of grown-in oxide precipitate nuclei in the reg
ion near the surface seems only possible by RTA in argon/hydrogen atmospher
e. The denuded zone defect density is much lower after RTA than after conve
ntional annealing for oxygen outdiffusion, while the depth profile of the d
efect density is less steep. The use of the above mentioned conclusions for
'ramp engineering' in device processing allows the creation of excellent d
enuded zones during a device process itself without influencing the device
characteristics. (C) 2000 Elsevier Science S.A. All rights reserved.