Citation
S. Senkader et al., A study of oxygen dislocation interactions in CZ-Si, MAT SCI E B, 73(1-3), 2000, pp. 111-115
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
111 - 115
Database
ISI
SICI code
0921-5107(20000403)73:1-3<111:ASOODI>2.0.ZU;2-X
Abstract
The interaction between dislocations and oxygen atoms in silicon has been s
tudied. The effect of immobilization of dislocations by the segregation of
oxygen to the dislocation core (dislocation locking) has been investigated
for different oxygen concentrations and annealing conditions. It has been r
evealed that oxygen locking of dislocations shows three different regimes o
f behaviour. A numerical model for the dislocation locking process of oxyge
n atoms has been presented and used to interpret the experimental results.
(C) 2000 Published by Elsevier Science S.A. All rights reserved.