Ellipsometry and microscopy study of nanocrystalline Si : H layers formed by high dose implantation of silicon

Authors
Popov, VP Antonova, IV Gutakovsky, AK Spesivtsev, EV Morosov, II
Citation
Vp. Popov et al., Ellipsometry and microscopy study of nanocrystalline Si : H layers formed by high dose implantation of silicon, MAT SCI E B, 73(1-3), 2000, pp. 120-123
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
120 - 123
Database
ISI
SICI code
0921-5107(20000403)73:1-3<120:EAMSON>2.0.ZU;2-8
Abstract
A study of Si:H layers formed by high dose hydrogen implantation using puls ed beams was performed in the present work. Anneals in the temperature inte rval 200-1050 degrees C lead to a transformation of structural and optical properties of Si:H layers. These layers were analyzed by transmission elect ron microscopy, Rutherford backscattering spectrometry, spectroscopic ellip sometry and secondary ion mass spectroscopy techniques. (C) 2000 published by Elsevier Science S.A. All rights reserved.