Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation

The hydrogen-enhanced thermal donor (TD) formation in Czochralski (Cz) sili con is used for the characterization of the interstitial oxygen distributio n by spreading resistance probe (SRP) analysis or by the carrier concentrat ion from capacitance-voltage (C-V) measurements. For as-grown wafers or waf ers with a denuded wne, the enhanced TD formation in Ct silicon has been st udied by applying a hydrogenation from a plasma. A kinetic model for the hy drogen-enhanced TD formation is presented, and a method for the conversion of the carrier concentration due to TDs into a concentration of interstitia l oxygen is proposed. For comparison, infrared spectrometry was applied for the characterization of the oxygen concentration in the samples. On the ba sis of the proposed model, the analysis by the SRP or C-V measurements of C t Si samples containing TDs, which were generated with the support of hydro gen, can be used for the quantitative estimation of the distribution of int erstitial oxygen in the as-grown wafers as well as, at least qualitatively, of the interstitial oxygen distribution in wafers with denuded zones. (C) 2000 Elsevier Science S.A. All rights reserved.