Citation
A. Borghesi et al., Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen, MAT SCI E B, 73(1-3), 2000, pp. 145-148
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107
→ ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
145 - 148
Database
ISI
SICI code
0921-5107(20000403)73:1-3<145:ICOOPI>2.0.ZU;2-B
Abstract
The study of the optical behavior of oxygen in silicon is presented, based
on infrared absorption measurements performed at liquid helium temperature.
A total of six groups of silicon wafers characterized by different initial
concentrations of interstitial oxygen from similar to 2 x 10(17) to simila
r to 10(18) atoms cm(-3) were analysed. The experimental conditions were ch
osen so as to distinguish the contributions from interstitial and precipita
ted oxygen, while the thermal treatment of the samples was studied in order
to cause the growth of the grown-in precipitates. The relative concentrati
ons of platelet and spheroid precipitates grown after the thermal treatment
of the wafers are discussed. (C) 2000 Elsevier Science S.A. All rights res
erved.