Thermal history simulation of Czochralski silicon crystals and its application to the study of defects formation during crystal growth

A finite element quasi-steady-state modeling of temperature distribution du ring the growth of a silicon crystal by the Czochralski (CZ) method is pres ented. Computations are performed for a comprehensive geometrical model of an actual CZ puller, accounting for detailed radiation heat exchange and in troducing a reviewed set of temperature-dependent thermophysical properties . The crystal growth process is simulated step-wise, with automatic update of the mesh at each successive growth step. Temperature and pull rate data are then input to a mathematical routine for the calculation of the dwell t ime for user-defined temperature intervals and crystal position. Applicatio ns of this simulation tool for the interpretation of crystal quality charac teristics such as oxygen precipitation and light scattering defect axial pr ofiles are presented. (C) 2000 Elsevier Science S.A. All rights reserved.