R. Job et al., Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon, MAT SCI E B, 73(1-3), 2000, pp. 197-202
The incorporation of hydrogen into p-type Czochralski (Cz) silicon by a pla
sma results in an enhanced thermal donor (TD) formation. Counter doping by
TDs and a rapid p-n junction formation occurs in p-type Si if the acceptor
concentration is lower than 10(16) cm(-3). Two process routes are discussed
: (1) a one-step process where p-n junctions appear just after a H plasma e
xposure at 400-450 degrees C; (2) a two-step process where the p-n junction
formation requires an annealing at 400-450 degrees C after a plasma treatm
ent at lower temperatures. No dopant incorporation is involved in the proce
sses. A controlled TD formation can be used for a rapid low temperature tec
hnology for the fabrication of diodes with deep p-n junctions. The characte
rization of the samples/devices was done by spreading resistance probe anal
ysis, I(V)-, and C(V) measurements. (C) 2000 Elsevier Science S.A. All righ
ts reserved.