Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon

Citation
R. Job et al., Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon, MAT SCI E B, 73(1-3), 2000, pp. 197-202
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
197 - 202
Database
ISI
SICI code
0921-5107(20000403)73:1-3<197:EDFBSH>2.0.ZU;2-6
Abstract
The incorporation of hydrogen into p-type Czochralski (Cz) silicon by a pla sma results in an enhanced thermal donor (TD) formation. Counter doping by TDs and a rapid p-n junction formation occurs in p-type Si if the acceptor concentration is lower than 10(16) cm(-3). Two process routes are discussed : (1) a one-step process where p-n junctions appear just after a H plasma e xposure at 400-450 degrees C; (2) a two-step process where the p-n junction formation requires an annealing at 400-450 degrees C after a plasma treatm ent at lower temperatures. No dopant incorporation is involved in the proce sses. A controlled TD formation can be used for a rapid low temperature tec hnology for the fabrication of diodes with deep p-n junctions. The characte rization of the samples/devices was done by spreading resistance probe anal ysis, I(V)-, and C(V) measurements. (C) 2000 Elsevier Science S.A. All righ ts reserved.