Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers

In this paper, the effects of thin epi layer deposition treatment on format ion, growth or dissolution of traditionally known defects like oxygen preci pitates or OISF and recently investigated defects, related to vacancy or se lf-interstitial (COPs, D-defects, I-defects) aggregates, are presented and discussed. Several characterization techniques, integrated in order to obta in a complete picture of the material properties, have been applied on subs trates and epitaxial wafers. Samples have been chosen along the crystal axi s to allow the study of the influence of growth thermal history on substrat e defect stability at the high temperature of epi deposition treatments. Th e role of substrate oxygen content and dopant concentration in affecting de fect formation and dissolution during epi layer growth are included in the discussion. (C) 2000 Elsevier Science S.A. All rights reserved.