Optical absorption of precipitated oxygen in silicon at liquid helium temperature

Authors
Sassella, A Borghesi, A Borionetti, G Geranzani, P
Citation
A. Sassella et al., Optical absorption of precipitated oxygen in silicon at liquid helium temperature, MAT SCI E B, 73(1-3), 2000, pp. 224-229
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
73
Issue
1-3
Year of publication
2000
Pages
224 - 229
Database
ISI
SICI code
0921-5107(20000403)73:1-3<224:OAOPOI>2.0.ZU;2-F
Abstract
Optical absorption measurements are reported, carried out in the medium inf rared range at liquid helium temperature on silicon wafers after different thermal treatments for oxygen precipitation. The low temperature spectra sh ow a complex band structure where the contributions related to precipitates with different shapes can he distinguished and, in some cases, quantified on the basis of the results of an effective medium model. (C) 2000 Elsevier Science S.A. All rights reserved.