Synthesis and photoluminescence properties of semiconductor nanowires

Citation
Zg. Bai et al., Synthesis and photoluminescence properties of semiconductor nanowires, MAT SCI E B, 72(2-3), 2000, pp. 117-120
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
72
Issue
2-3
Year of publication
2000
Pages
117 - 120
Database
ISI
SICI code
0921-5107(20000315)72:2-3<117:SAPPOS>2.0.ZU;2-E
Abstract
GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) properties of the Si nanowires were investigated in correlation with the diameter of the crystalline core. Intensive light emi ssion was observed peaking at dark red, green and blue regions for the as g rown and partially oxidized SiNW samples. The red PL emission is ascribed t o the quantum confinement effect of the crystalline core of the SiNWs, whil e the green and blue ones are attributed to the radiative recombination of the defect centers in the amorphous silicon oxide layer surrounding the SiN Ws. (C) 2000 Published by Elsevier Science S.A. All rights reserved.